Improved buildup model for radiation-induced, defects in MOSFET isolation oxides
- Citation:
- Shaker, H. H., A. A. Saleh, M. R. Amin, and S. E. D. Habib, "Improved buildup model for radiation-induced, defects in MOSFET isolation oxides", Journal of Radiation Research and Applied Sciences, vol. 15, no. 2: Elsevier, pp. 67–75, 2022.
Abstract:
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Notes:
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