Polycrystalline carbon nitride thin films were deposited on Si (100) substrates by electrolysis of methanol-urea solution at atmospheric pressure and low temperature. The effect of the process parameters, namely deposition time, concentration and applied voltage on growth and bonding state of carbon nitride (CNx) thin films was studied using Fourier transform infrared (FTIR) spectroscopy, grazing incidence X-ray diffraction (GIXRD) and scanning electron microscope (SEM).
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