Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4
- Citation:
- Mogoda, A. S., Y. H. Ahmad, and W. A. Badawy, "Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4", Materials Chem.and Phys., vol. 126, issue 3, pp. 676-684, 2011.
Abstract:
Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated byelectrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively.
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