Influence of the nitrogen dopant concentration and of the rate of excitation on the photoluminescence of GaAs1-xPx:N in the composition range x> 0.67 | Mohamed Saad Eldin

Influence of the nitrogen dopant concentration and of the rate of excitation on the photoluminescence of GaAs1-xPx:N in the composition range x> 0.67

Citation:: M.Munir, N.R.Nurtdinov, R.Stegmannad, and A.E.Yunovich, "Influence of the nitrogen dopant concentration and of the rate of excitation on the photoluminescence of GaAs1-xPx:N in the composition range x> 0.67", Sov.Phys.Semicond. , vol. 15, 1981.