DIFFUSION OF In AND Pt IN MELT-QUENCHED AMORPHOUS SILICON AT T\^{} 300 C | Mohamed Abdel Harith

DIFFUSION OF In AND Pt IN MELT-QUENCHED AMORPHOUS SILICON AT T\^{} 300 C

Citation:: Campisano, S. U., M. A. Harith, and J. M. Poate+, "DIFFUSION OF In AND Pt IN MELT-QUENCHED AMORPHOUS SILICON AT T\^{} 300 C", Energy Beam-solid Interactions and Transient Thermal Processing, 1985, IV: May 13th-15th 1985, Strasbourg (France), vol. 10: éditions de physique, pp. 67, 1985.

Abstract:

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