Diffusion of In and Pt in melt-quenched amorphous silicon at T≤ 300 degrees C
- Citation:
- Harith, M. A., S. U. Campisano, and J. M. Poate,
"Diffusion of In and Pt in melt-quenched amorphous silicon at T≤ 300 degrees C",
Semiconductor science and technology, vol. 3, no. 9: IOP Publishing, pp. 829, 1988.
Abstract:
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Notes:
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