Sayed, W. S., and H. A. H. Fahmy,
"What are the Correct Results for the Special Values of the Operands of the Power Operation?",
{ACM} Transactions on Mathematical Software, vol. 42, no. 2, New York, NY, USA, ACM, pp. 14:1–14:17, may, 2016.
AbstractLanguage standards such as C99, C11, as well as the IEEE Standard for Floating-Point Arithmetic 754 (IEEE Std 754-2008) specify the expected behavior of binary and decimal floating-point arithmetic in computer programming environments and the handling of special values and exception conditions. Many researchers focus on verifying the compliance of implementations for binary and decimal floating-point operations with these standards. In this article, we are concerned with the special values of the operands of the power function $Z = X^Y$. We study how the standards define the correct results for this operation, propose a mathematically justified definition for the correct results of the power function on the occurrence of these special values as its operands, test how different software implementations for the power function deal with these special values, and classify the behavior of different programming languages from the viewpoint of how much they conform to the standards and our proposed mathematical definition. We present inconsistencies between the implementations and the standards and we discuss incompatibilities between different versions of the same software.
M. Hassan, A., H. A. H. Fahmy, and N. H. Rafat,
"Enhanced Model of Conductive Filament-Based Memristor via including Trapezoidal Electron Tunneling Barrier Effect",
{IEEE} {T}ransactions on {N}anotechnology ({TNANO}), vol. 15, no. 3, pp. 484–491, 2016.
AbstractMemristors exhibit very promising features such as nonvolatility and small area. Several types of memristors have been developed in the last decade using different materials along with physical models explaining their behaviors. In this paper, we modify a previously published model to account for a trapezoidal electron tunneling barrier rather than a zero field or constant potential barrier. The model is verified against experimental data showing better agreement. We then perform a study to find out the effect of different memristors parameters on its I-V characteristics and how to shape the characteristics to fit the applications. Finally, we provide a SPICE model which takes into account the tunneling capacitance and clarify that any fabricated memristor has, inherently, a memcapacitor in parallel. The dominant element may be the memristor or the memcapacitor depending on the frequency of operation.
Elashkar, N., M. Aboudina, H. A. H. Fahmy, G. H. Ibrahim, and A. H. Khalil,
"Memristor based {BPSK} and {QPSK} Demodulators with Nonlinear Dopant Drift Model",
Microelectronics Journal, vol. 56, pp. 17–24, 2016.
AbstractIn this paper, the dependence of the instantaneous memristance value and its I–V characteristics on a periodic signal phase are studied. Hence, expression for the instantaneous memristance as a function of the periodic input phase is derived. This derivation is based on the memristor linear dopant drift model and is provided for sinusoidal input waveforms. To prove the tendency, simulations using linear and nonlinear dopant drift memristor models are performed in the Cadence simulation environment. Based on those, a set of digital communication demodulators are proposed and investigated exploiting the change of the average memristance with the initial phase of applied signal. The experimental-based `nonlinear' dopant drift model is used in designing the proposed demodulators for Binary Phase Shift Keying (BPSK) and Quadrature Phase Shift Keying (QPSK) modulation schemes. Since all proposed demodulators are asynchronous, the proposed circuits do not need any carrier recovery circuits. Moreover, transient simulations have been executed showing the proper matching to the expected performance.