Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO2) Multilayers: A Promising Route for Si-Based Infrared Plasmonics
- Citation:
- Valdenaire, A., A. E. Giba, M. Stoffel, X. Devaux, L. Foussat, J. - M. Poumirol, C. Bonafos, S. Guehairia, R. Demoulin, E. Talbot, et al., "Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO2) Multilayers: A Promising Route for Si-Based Infrared Plasmonics", ACS Applied Nano MaterialsACS Applied Nano Materials, vol. 6, issue 5: American Chemical Society, pp. 3312 - 3320, 2023.
Abstract:
n/a
Notes:
doi: 10.1021/acsanm.2c05088