Mohamed Yousef Hassan Sayed
St. 231, Building No.8, Degla, Maadi, Cairo, Egypt
Postal code:
11516
Email:
m.yusuf@aucegypt.edu
Teaching and Research assistant, Dept. of Mathematics and
Physics Engineering, Faculty of Engineering, Cairo University, 126 13, Egypt
Education:
• Sep 2010 – Present: M.Sc., Dept. of Mathematics and Physics Engineering, Cairo University, Faculty of Engineering, Cairo, Egypt.
- Preliminary Courses GPA: 3.6/4.0 " B+"
- Dissertation: "COMPACT MODEL FOR DOUBLE GATE TUNNEL FIELD-EFFECT TRANSISTOR"
- Thesis Advisors: Prof. Serag E.-D. Habib, and Prof. Nadia Hussein Rafat.
- Master graduate Courses: Advanced Quantum Mechanics, Advanced Selected Topic (Quantum Modeling of Nanoscale Transistors), Solid State Electronic Devices, Computational Physics, Advanced Numerical Analysis, Mathematical Physics, Electrodynamics, and Technical Writing.
- Qualifying Courses: Quantum Mechanics, Solid State Physics, Statistical Mechanics, and Classical Mechanics.
• Sep 2005 – May 2010: B.E., Electronic and Electrical Communication Dept., Faculty of Engineering, Cairo University, Cairo, Egypt.
- Final Grade: Distinction with honors, ranked as 17th/380
Honors and Awards:
- Mar 2011: Teaching and Research Assistantship, Dept. of Mathematics and Physics Engineering, Faculty of Engineering, Cairo University, Cairo, Egypt.
- Sep 2010: Masters of Science in Physical Engineering Fellowship, Dept. of Mathematics and Physics Engineering, Faculty of Engineering, Cairo University, Cairo, Egypt.
- Jul 2010: Cairo University Award for Academic Distinction, Egypt.
- Sep 2005 – Jul 2010: Recipient of Fellowship at Electronics and Electrical Communication Dept., Faculty of Engineering, Cairo University, Cairo, Egypt.
Publication:
• Thesis:
1. Mohamed Yousef Hassan. COMPACT MODEL FOR DOUBLE GATE TUNNEL FIELD-EFFECT TRANSISTOR. Master Thesis. Dept. of Mathematics and Physics Engineering, Faculty of Engineering, Cairo University, Egypt, Jul. 2015.
References:
Available Upon Request
(Last updated: Sun, 2015-12-20 10:10)