Statistical SRAM Read Access Yield Improvement Using Negative Capacitance Circuits

Citation:
Mostafa, H., M. Anis, and M. Elmasry, "Statistical SRAM Read Access Yield Improvement Using Negative Capacitance Circuits", IEEE Transactions on Very Large Scale Integra- tion Systems (TVLSI), vol. 21, issue 1: IEEE, pp. 92-101, 2013. copy at www.tinyurl.com/jcx9x8j

Abstract:

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