Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0. 33Ga0. 67As | Almontaser Khatab

Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0. 33Ga0. 67As

Citation:: Mari, R. H., M. Aziz, M. Shafi, A. Khatab, D. Taylor, and M. Henini, "Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0. 33Ga0. 67As", physica status solidi (c), vol. 9, no. 7: Wiley Online Library, pp. 1643–1646, 2012.

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